The Stacking of CMOS Photovoltaic Devices by Localized Substrate Removal for High Voltage Generation
نویسندگان
چکیده
Voltage boosting from CMOS photovoltaic device (PV) is achieved by implementing multiple PV units on single CMOS chip and are series connected by an external integrated passive device. Localized substrate removal process is developed to electrically isolate the PV units. Four-cell cascaded CMOS PV module provides an open-circuit voltage of 2.05 V while maintaining its superior PV performance.
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